A Behavioral Compact Model for Static Characteristics of 3D NAND Flash Memory
نویسندگان
چکیده
منابع مشابه
A Survey of 3D Nand Flash Memory
Nand flash memory is an important part of the electronics products. Over the years scientists and engineers have worked hard to make it faster and cost effective. Recently, there has been a realization that current technologies is not capable of further increasing their capacity and at the same time keep the cost down. Keeping in view this limit and the ever increasing need for Nand flash memor...
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With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied the largest market share of flash memory. With the aggressive memory scaling, however, the reliability decays sharply owing to multiple interferences. Therefor...
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Flash memory has gained tremendous popularity in recent years. A variant of flash, referred to as NAND flash, is widely used in consumer electronics products, such as cell-phones and music players while NAND flash based Solid-State Disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. Computer architects have recentl...
متن کاملModeling the Physical Characteristics of Nand Flash Memory
Flash memory has gained tremendous popularity in recent years. A variant of flash, referred to as NAND flash, is widely used in consumer electronics products, such as cell-phones and music players while NAND flash based Solid-State Disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. Computer architects have recentl...
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Reliability represents one of the major antagonist towards the unstoppable technological evolution of hyperscaled NAND memories, since the correct operations must be assured throughout the entire lifetime. In particular, the ability of keeping unaltered the stored information even after a consistent number of write operations and for long times must be guaranteed. A growth of the memory devices...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2019
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2019.2901211